Cost-efficient lithography process in which a focused laser beam directly writes precise features without using a physical reticle, enabling high accuracy and flexibility in semiconductor mask fabrication. Wavelengths around 400 nm are used to take advantage of well-established i-line photoresists. Using lasers at 405nm minimum linewidths of 500nm and CD uniformities < 15 nm can be achieved. 

High coherence, minimum frequency drift and excellent beam quality are key for generating micro and nanostructures via interference lithography. Watt-level laser power enable processing large area substrates with highest quality outcome and significantly reduces exposure times. 

From semiconductor patterning and 3D microprinting to holographic optics and transparent displays, laser light is the most precise tool.